منابع مشابه
A photoluminescence study of δ-doped GaAs
Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...
متن کاملPhotoluminescence of the GaAs Superlattices with Quasi-Delta-Doped Layers
The GaAs short-period superlattices have been grown for the first time by the metal-organic hydride epitaxy method using Se and C for quasi-doping. Photoluminescence spectra measured at 4.2 K display well-distinguished peaks, which coincide with transitions between quantizied levels of electrons and holes in the potential relief quantum wells. To describe observed phenomena in quasi-doped super...
متن کاملNew photoluminescence lines in Vanadium doped GaAs grown by MOVPE
We examined the electrical and optical properties of vanadium-doped GaAs grown by metalorganic vapour phase epitaxy using vanadium tetrachloride (VCl4) as a novel dopant source. Samples with various vanadium incorporations were investigated. All samples were n type. The electron concentration dependence on the VCl4 flow rate was established. At 15 K, by comparison with undoped layers grown in t...
متن کاملLaser-induced etching of Cr–O doped GaAs and wavelength dependent photoluminescence
The laser-induced chemical etching mechanism of Cr–O doped GaAs (1 0 0) substrate in 40% HF-H2O solution is explained by the generation of e–h pairs through defect states in the presence of sub-bandgap photon illumination by using a Nd:YAG Laser (λ ∼ 1.06 m). The central feature of the laser etching technique is pits initiation by surface defects. The etched GaAs samples are characterised by ph...
متن کاملMorphology and photoluminescence studies of electrochemically etched heavily doped p-type GaAs in HF solution
Porous GaAs layers have been produced by electrochemical anodic etching of (100) heavily doped p-type GaAs substrate in HF solution. Scanning electron microscopy revealed the presence of etch pits ranging in size from 0.01 to 2 mm and they were strongly dependent on the electrochemical etching conditions. The etch pits chemical composition consists of O, Ga and As whereas the porous structure c...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1993
ISSN: 1155-4339
DOI: 10.1051/jp4:1993560